features high emitter-base voltage low on resistance marking: max maximum ratings (t a =25 unless otherwise noted) symbol parameter value units v cbo collector-base voltage 25 v v ceo collector-emitter voltage 20 v v ebo emitter-base voltage 12 v i c collector current -continuous 0.3 a p c collector power dissipation 0.2 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 25 v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 20 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 12 v collector cut-off current i cbo v cb =25 v, i e =0 0.1 a emitter cut-off current i ebo v eb =12v, i c =0 0.1 a h fe (for) v ce =2v, i c =4 ma 200 1000 dc current gain h fe (rev) v ce = 2v, i c = 4ma 20 collector-emitter saturation voltage v ce (sat) i c = 100ma, i b =10 ma 0.25 v base-emitter saturation voltage v be (sat) i c = 100ma, i b =10ma 1 v transition frequency f t v ce =10v, i c = 1ma f= 100mhz 60 mhz output capacitance c ob v cb =10v,i e =0,f=1mhz 10 pf on resistance r (on) v in =0.3v,i b =1ma,f=1kh z 0.6 sot-23 1. base 2. emitter 3.collector KTD1304 transistor (npn) 1 date:2011/05 www.htsemi.com semiconductor jinyu
typical characteristics KTD1304 2 date:2011/05 www.htsemi.com semiconductor jinyu
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